OSIRIS-EcselJu : Optimal SIC substRates for Integrated Microwave and Power CircuitS
Contrat européen H2020 JTI-ECSEL (Joint Technology Initiatives - Electronic Components & Systems for European Leadership, Joint Undertaking)
Lead by III-V Lab (F), leading European lab in the field of GaN technology, the Consortium includes
- Ascatron (Sw) involved in SiC technology for power electronics ;
- CNRS-CIMAP (F) lab involved in material analysis ;
- Intraspec Technologies (F), a company involved in wafer and device characterisation ;
- Isosilicon (Norway) which will extract the selected carbon and silicon isotopes for the SiC growth ;
- University of Linkoping (Sw) which has relying on recent demonstration and a long expertise on the developing a challenging isotopic SiC material approach of the University of Linkoping (Sw) ;
- NORSTEL (Sw) a leading SiC substrate supplier ;
- STUBA FEI : Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technologies - Research fields of interest : Micro-/Nano-Electronics,
Photonics, New Materials, Nanotechnology - UMS (F-G) the largest III-V component manufacturer in Europe for microwave applications ;