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Publications PM2E 2019

par CHAUVAT Marie-pierre - publié le , mis à jour le

  • 1. Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Stanislav Hasenöhrl, Prerna Chauhan, Edmund Dobročka, Roman Stoklas, Ľubomír Vančo, Marián Veselý, Farah Bouazzaoui, Marie-Pierre Chauvat, Pierre Ruterana, and Ján Kuzmík, Applied Physics Express, 12, 014001 (2019), https://doi.org/10.7567/1882-0786/aaef41
  • 2. Experimental and numerical studies on the low-velocity impact response of orthogrid epoxy panels reinforced with short plant fibers, K. Hamamousse, Z. Sereir, R. Benzidane , F. Gehring , M. Gomina, C. Poilâne, Composite Structures, 211, pp. 469–480, (2019), https://doi.org/10.1016/j.compstruct.2019.01.005
  • 3. Effect of hygroscopy on non-impregnated quasi-unidirectional flax
    reinforcement behaviour
    , Marwa Abida, Florian Gehring, Jamel Mars, Alexandre Vivet, Fakhreddine Dammak, Mohamed Haddarb, Industrial Crops & Products, 128, pp. 315–322, (2019), https://doi.org/10.1016/j.indcrop.2018.11.008
  • 4. Evidence of relationship between strain and In-incorporation : Growth of N-polar In-rich InAlN buffer layer by OMCVD, P. Chauhan , S. Hasenöhrl, E. Dobročka, M. P. Chauvat, A. Minj, F. Gucmann , Ľ. Vančo, J. Kováč, S. Kret
    , P. Ruterana , M. Kuball , P. Šiffalovič , and J. Kuzmík, J. Appl. Phys., 125, 105304, (2019), https://doi.org/10.1063/1.5079756
  • 5. Incorporation of Europium into GaN Nanowires by Ion Implantation, D. Nd. Faye, X. Biquard, E. Nogales, M. Felizardo, M. Peres, A. Redondo-Cubero, T. Auzelle, B. Daudin, L. H. G. Tizei, M. Kociak, P. Ruterana, W. Möller, B. Méndez, E. Alves, and K. Lorenz, J. Phys. Chem. C, 123, 11874(2019) https://doi.org/10.1021/acs.jpcc.8b12014
  • 6. Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55μm, L. Monroy, M. Jimenez-Rodriguez, P. Ruterana, E.Monroy, M. Gonzalez-Herraez, and F. B. Naranjo, Optical Materials Express, 9, 2785(2019) https://doi.org/10.1364/OME.9.002785
  • 7. The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer, R. Mohamad, M. P. Chauvat, S. Kret, P. Gamarra, S. Delage, V. Hounkpati, C. Lacam, J. Chen, and P. Ruterana, J. Appl. Phys. , 125, 215707 (2019) https://doi.org/10.1063/1.5088109
  • 8. The [101 ̅0] edge dislocation in the wurtzite structure : A high-resolution transmission electron microscopy investigation of [0001] tilt grain boundaries in GaN and ZnO, R. Mohamad, M. P. Chauvat, S. Kret, P. Gamarra, S. Delage, V. Hounkpati, C. Lacam, J. Chen, and P. Ruterana, Acta Materialia , 175, 457 (2019) https://doi.org/10.1016/j.actamat.2019.06.044

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