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Publications

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Retrouver ici l’ensemble des publications du groupe de recherche NIMPH.

Le groupe de recherche NIMPH dispose d’une "collection sous le portail HAL" permettant la recherche multicritère sur les publications affiliées :
- HAL : CIMAP / NIMPH

2016

  1. Fluorenyl Zinc Phosphonate Zn(H2O)PO3 -C13H9·H2O : Hybrid Columnar Structure with Strong C-H···π Interactions
    C. Bloyet, J.-M.l Rueff, V. Caignaert, J.-F. Lohier, J. Cardin, P.-Al. Jaffrès, B. Raveau, Journal of Inorganic and General Chemistry / Zeitschrift für anorganische und allgemeine Chemie, 2016, doi:10.1002/zaac.201600362
    https://hal.archives-ouvertes.fr/hal-01425234v1
  2. Optical, structural and electrical characterizations of stacked Hf-based and silicon nitride dielectrics
    L. Khomenkova, P. Normand, F. Gourbilleau, A. Slaoui, C. Bonafos, Thin Solid Films, 2016, doi:10.1016/j.tsf.2016.04.036
    https://hal.archives-ouvertes.fr/hal-01402836v1
  3. Blue highly fluorescent boron difluoride complexes based on phthalazine-pyridine
    T. M. H. Vuong, J. Weimmerskirch-Aubatin, J.-F. Lohier, N. Bar, S. Boudin, C. Labbe, F. Gourbilleau, N. Hien, T Tung, T. Dang, D. Villemin, New Journal of Chemistry, 2016, doi:10.1039/C6NJ00726K
    https://hal.archives-ouvertes.fr/hal-01388831v1
  4. Layered crystalline ZnIn2S4 nanosheets : CVD synthesis and photo-electrochemical properties
    B. Liu, T. Fang, W. Yang, J. Weimmerskirch-Aubatin, C. Labbe, Z. Li, X. Zhang, X. Jiang , Nanoscale, 2016, doi:10.1039/C6NR06969J
    https://hal.archives-ouvertes.fr/hal-01427044v1
  5. SiNx:Tb3+–Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process
    L. Dumont, J. Cardin, P. Benzo, M. Carrada, A. L. Richard,D. C. Ingram, W. M. Jadwisienczak, F. Gourbilleau , Solar Energy Materials and Solar Cells, 2016, doi:10.1016/j.solmat.2015.09.031
    https://hal.archives-ouvertes.fr/hal-01228774v1

2015

  1. Copper–Fluorenephosphonate Cu­(PO3-C13H9)·H2O : A Layered Antiferromagnetic Hybrid
    N. Hugot, M. Roger, J.-M. Rueff, J. Cardin, O. Perez, V. Caignaert, B. Raveau, G. Rogez, P.-A. Jaffrès, European Journal of Inorganic Chemistry, WILEY-VCH Verlag, December 2015, doi : 10.1002/ejic.201501041
    URL https://hal.archives-ouvertes.fr/hal-01239831
  2. Confined phase separation in SiOx nanometric thin layers, M. Roussel, E. Talbot, C. Pareige, R.P. Nalini, F. Gourbilleau, and P. Pareige, Applied Physics Letters, 103:203109 2015, doi : 10.1063/1.4830375
    URL https://hal.archives-ouvertes.fr/hal-00909848.
  3. Three-Dimensional Devices Transport Simulation Lifetime and Relaxation Semiconductor, N. Fadila, S. Mansouri, M. Amrani, P. Marie, and A. Massoum. International Journal of Electrical and Computer Engineering (IJECE), 5(2):243, 2015, doi ???
    URL https://hal.archives-ouvertes.fr/hal-01149679
  4. Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method : comparison of achievable gain with Er3+ or Nd3+ ions dopants, J. Cardin, A. Fafin, C. Dufour, and F. Gourbilleau, PROC of SPIE, Vol. 9357 Physics and Simulation of Optoelectronic Devices XXIII, Photonics West 2015, San Francisco, United States, February 2015, doi : 10.1117/12.2077611
    URL https://hal.archives-ouvertes.fr/hal-01133149
  5. Two components for one resistivity in LaVO3/SrTiO3 heterostructure, H. Rotella, O. Copie, A. Pautrat, P. Boullay, A. David, D. Pelloquin, C. Labbe, C. Frilay, W. Prellier, Journal of Physics : Condensed Matter, IOP Publishing, 2015, 27 (9), pp.095603 1-8. <10.1088/0953-8984, doi : 10.1088/0953-8984
    URL https://hal.archives-ouvertes.fr/hal-01164152

2014

  1. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor, K. Hamdani, M. Chaouche, M. Benabdeslem, L. Bechiri, N. Benslim, A. Amara, X. Portier, M. Bououdina, A. Otmani, P. Marie, Optical Materials, 37:338, November 2014, doi:10.1016/j.optmat.2014.06.022
    URL https://hal.archives-ouvertes.fr/hal-01149674
  2. Concentration determination and activation of rare earth dopants in zinc oxide thin films, A. Ziani, A. Tempez, C. Frilay, C. Davesnne, C. Labbe, P. Marie, S. Legendre, X. Portier. Physica Status Solidi C, 11(9-10):1, September 2014, doi:10.1002/pssc.201300636
    URL https://hal.archives-ouvertes.fr/hal-01149627
  3. Theoretical investigation of the more suitable rare earth to achieve high gain in waveguide based on silica containing silicon nanograins doped with either Nd3+ or Er3+ ions, A. Fafin, J. Cardin, C. Dufour, and F. Gourbilleau, Optics Express, 22(10):12296 12306, May 2014, doi : 10.1364/OE.22.012296
    URL https://hal.archives-ouvertes.fr/hal-00993306
  4. Photochemical preparation of silver nanoparticles supported on zeolite crystals, M. Zaarour, M. El Roz, B. Dong, R. Retoux, R. Aad, J. Cardin, C. Dufour, F. Gourbilleau, J.-P. Gilson, S. Mintova, Langmuir, 30(21):62506256, May 2014, doi:10.1021/la5006743
    URL https://hal.archives-ouvertes.fr/hal-01138057
  5. Spectroscopic and structural investigation of undoped and Er3+ doped hafnium silicate layers, L. Khomenkova, Y.-T. An, D. Khomenkov, X. Portier, C. Labbé, F. Gourbilleau, Physica B+C, 453:100, April 2014, doi:10.1016/j.physb.2014.03.087
    URL https://hal.archives-ouvertes.fr/hal-01078069
  6. Annealing effects on the photoluminescence of terbium doped zinc
    oxide films, A. Ziani, C. Davesnne, C. Labbé, J. Cardin, P. Marie, X. Portier, C. Frilay, S. Boudin, Thin Solid Films, 553:52 57, February 2014, doi:10.1016/j.tsf.2013.11.123
    URL https://hal.archives-ouvertes.fr/hal-01138059
  7. Analysis of carrier injection in Si nanoparticle-SiOx film based MOS devices, E. Jacques, L. Pichon, C. Labbé, L. Khomenkova, F. Gourbilleau, physica status solidi (c), 11(2):206, February 2014, doi : 10.1002/pssc.201300379,
    URL https://hal.archives-ouvertes.fr/hal-00956213.
  8. Structural characterisation of BaTiO3 thin films deposited on SrRuO3/YSZ buffered silicon substrates and silicon microcantilevers, H. Colder, B. Domenges, C. Jorel, P. Marie, M. Boisserie, S. Guillon, L. Nicu, A. Galdi, L. Mechin, Journal of Applied Physics,115(5):053506, 2014,
    URL https://hal.archives-ouvertes.fr/hal-00977777
  9. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54µm, J. M. Ramirez, S. Cueff, Y. Berencen, C. Labbé, B. Garrido, Journal of Applied Physics, 116:083103 1 4, 2014, doi : 10.1063/1.4893706
    URL https://hal.archives-ouvertes.fr/hal-01139287
  10. On the relevance of large scale pulsed-laser deposition : Evidence of structural heterogeneities in ZnO thin films, J Perriere, C Hebert, N. Jedrecy, W Seiler, O Zanellato, X Portier, R Perez-Casero, E Millon, M Nistor, Journal of applied physics, 116:123502, 2014, doi:10.1063/1.4896379
    URL https://hal.archives-ouvertes.fr/hal-01081606
  11. Energy deposition by heavy ions : Additivity of kinetic and potential energy contributions in hillock formation on CaF2, Y. Y. Wang, C. Grygiel, C. Dufour, J. R. Sun, Z. G. Wang, Y. T. Zhao, G. Q. Xiao, R. Cheng,X. M. Zhou, J. R. Ren, S. D. Liu, Y. Lei, Y. B. Sun, R. Ritter, E. Gruber, A. Cassimi, I. Monnet, S. Bouffard, F. Aumayr, M. Toulemonde, Scientific Reports, 4:5742, 2014, doi : 10.1038/srep05742,
    URL https://hal.archives-ouvertes.fr/hal-01084017
  12. Energy transfer mechanism between terbium and europium ions in zinc oxide and zinc silicates thin films, C. Davesnne, A. Ziani, C. Labbé, P. Marie, C. Frilay, X. Portier, Thin Solid Films, 553:33, 2014, doi : 10.1016/j.tdf.2013.11.122
    URL https://hal.archives-ouvertes.fr/hal-01149623
  13. Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped, R. Khelif, H. Mazari, S. Mansouri, Z. Benamara, M. Mostefaoui, K. Ameur, N. Benseddik, P. Marie, P. Ruterana, I. Monnet, J.-M. Bluet, C. Bru-Chevallier, Sensors and Transducers, 27:217, 2014 doi ???
    URL https://hal.archives-ouvertes.fr/hal-01149661
  14. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor, K. Hamdani, M. Chaouche, M. Benabdeslem, L. Bechiri, N. Benslim, A. Amara, X. Portier, M. Bououdina, A. Otmani, P. Marie, Optical Materials, Elsevier, 2014, 37, pp.338, doi:10.1016/j.optmat.2014.06.022
    URL https://hal.archives-ouvertes.fr/hal-01149674v1
  15. Formation and Study of the Nanostructured CuAl0.5Ga0.5Te2 Synthesized by Mechanical Alloying Processing, H. Sehli, M. Benabdeslem, N. Benslim, L. Bechiri, H. Ayed, A. Djekoun, M. Boujnah, X. Portier, S. Ammar, H. Lecoq, S. Novack, P. Decorse, JOM Journal of the Minerals, Metals and Materials Society, Springer Verlag (Germany), 2014, 66 (6), pp.985-991, doi:10.1007/s11837-014-0957-4
    URL https://hal.archives-ouvertes.fr/hal-01150454v1
  16. Zn incorporation in CuInSe2 : Particle size and strain effects on microstructural and electrical properties, M Benabdeslem, A Bouasla, N Benslim, L Bechiri, S Mehdaoui, O Aissaoui, A Djekoun, M Fromm, X Portier, Bulletin of Materials Science, Indian Academy of Sciences, 2014, 37 (3), pp.469-472, doi:10.1007/s12034-014-0687-9
    URL https://hal.archives-ouvertes.fr/hal-01150456v1

2013

  1. Electroluminescence effciencies of erbium in silicon-based hosts, S. Cueff, J. M. Ramirez, J. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and C. Labbe, Applied Physics Letters, 103:191109, November 2013. doi:10.1063/1.4829142
    URL https://hal.archives-ouvertes.fr/hal-01146452
  2. Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering, L. Khomenkova, M. Baran, O. Kolomys, V. Strelchuk, A. V. Kuchuk, V.P. Kladko, J. Jedrzejewski, I. Balberg, Y. Goldstein, P. Marie, F. Gourbilleau, N. Korsunska, Advanced Materials Research, 854:117, November 2013, doi : 10.4028/www.scientific.net/AMR.854.117
    URL https://hal.archives-ouvertes.fr/hal-01149651
  3. Modeling of the electromagnetic field and level populations in a waveguide amplifier : a multi-scale time problem, A. Fafin, J. Cardin, C. Dufour, F. Gourbilleau, Optics Express, 21(20):24171, October 2013, doi:10.1364/OE.21.024171
    URL https://hal.archives-ouvertes.fr/hal-00927306
  4. Highly Effcient Infrared Quantum Cutting in Tb3+Yb3+ Codoped Silicon Oxynitride for Solar Cell Applications, Y.-T. An, C. Labbé, J. Cardin, M. Morales, F. Gourbilleau. . Advanced Optical Materials, 1(11):85586, September 2013, doi:10.1002/adom.201300186
    URL https://hal.archives-ouvertes.fr/hal-01138682
  5. Phase transformation in SiOx/SiO2 multilayers for optielectronics and microelectronics applications, M. Roussel, E. Talbot, R.P. Nalini, F. Gourbilleau, P. Pareige, Ultramicroscopy, 132:290, September 2013, doi:10.1016/j.ultramic.2012.10.013
    URL https://hal.archives-ouvertes.fr/hal-00861764
  6. Evidence of two sensitization processes of Nd3+ ions in Nd-doped SiOx films, C.-H. Liang, J. Cardin, C. Labbé, and F. Gourbilleau, Journal of Applied Physics, 114:033103, July 2013, doi : 10.1063/1.4813610
    URL https://hal.archives-ouvertes.fr/hal-01138698
  7. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon
    rich silicon nitride waveguides, P. Pirasteh, J. Charrier, Y. Dumeige, J.-L. Doualan, P. Camy, O. Debieu, C.-H. Liang, L. Khomenkova, J. Lemaitre, Y. G. Boucher, F. Gourbilleau, Journal of Applied Physics, 114(1):014906, July 2013, doi:10.1063/1.4812470
    URL https://hal.archives-ouvertes.fr/hal-00842338
  8. Undoped and Nd3+ doped Si-based single layers and superlattices for photonic applications, L. Khomenkova, C. Labbé, X. Portier, M. Carrada, F. Gourbilleau, Physica Status Solidi A, pages 1 12, June 2013, doi : 10.1002/pssa.201200942
    URL https://hal.archives-ouvertes.fr/hal-00835886
  9. Si-rich Al2O3 films grown by RF magnetron sputtering : structural and
    photoluminescence properties versus annealing treatment, N. Korsunska, L. Khomenkova, O. Kolomys, V.Strelchuk, A. Kuchuk, V. Kladko, T. Stara, O. Oberemok, B. Romanyuk, P. Marie, J. Jedrzejewski, I. Balberg, Nanoscale Research Letters, 8:273, June 2013, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00854937
  10. Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters, M. Wojdak, H. Jayatilleka, M. Shah, A. J. Kenyon, F. Gourbilleau, R.Rizk, Journal of Luminescence, 136:407, April 2013, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00786018
  11. Influence of the supersaturation on Si diffusion and growth of Si nanoparticles in silicon-rich silica, M. Roussel, E. Talbot, P. Pareige, F. Gourbilleau, Journal of Applied Physics, 113:063519, February 2013, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00788699
  12. Structural and optical characterization of pure Si-rich nitride thin films, O. Debieu, R.P. Nalini, J. Cardin, X. Portier, J. Perriere, F. Gourbilleau, Nanoscale Research Letters, 8:31, February 2013, doi:10.1186/1556-276X-8-31
    URL https://hal.archives-ouvertes.fr/hal-00786013
  13. Microstructure and optical properties of Pr3+-doped hafnium silicate films, Y.-T. An, C. Labbé, L. Khomenkova, M. Morales, X. Portier, F. Gourbilleau, Nanoscale Research Letters, 8:43, February 2013, doi : 10.1186/1556-276X-8-43
    URL https://hal.archives-ouvertes.fr/hal-00786011
  14. Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica, E. Talbot, R. Lardé, P. Pareige, L. Khomenkova, K. Hijazi, F. Gourbilleau, Nanoscale Research Letters, 8:39, February 2013, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00786012.
  15. Structural and optical characterization of pure Si-rich nitride thin -films, O. Debieu, R. P. Nalini, J. Cardin, X. Portier, J. Perriere, F. Gourbilleau, Nanoscale Research Letters, 8(1):1 13, 2013, doi : 10.1063/1.1485302
    URL https://hal.archives-ouvertes.fr/hal-01138071
  16. Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide, G. Zatryb, A. Podhorodecki, J. Misiewicz, J. Cardin, F. Gourbilleau, Nanoscale Research Letters, 8(1):1 7,2013, doi : 10.1016/j.solidstatesciences.2009.05.004
    URL https://hal.archives-ouvertes.fr/hal-01138077.
  17. Characterization of oxygen deficient gallium oxide films grown by PLD, A. Petitmangin, B. Gallas, C. Hebert, J Perriere, L Binet, P Barboux, X Portier, Applied Surface Science, 2013, 278, pp.153-157, doi:10.1016/j.apsusc.2012.10.136
    URL https://hal.archives-ouvertes.fr/hal-01161030v1
  18. Quantum Conductance in Silicon Oxide Resistive Memory Devices
    A. Mehonic, A Vrajitoarea, S Cueff, S Hudziak, H Howe, C Labbe, R Rizk, M Pepper, and A. J. Kenyon, Scientific Reports, 3:2703, 2013, doi : 10.1038/srep02708
    URL https://hal.archives-ouvertes.fr/hal-01148206.

2012

  1. Electrically tailored resistance switching in silicon oxideAdnan Mehonic, S Cueff, M Wojdak, S Hudziak, C Labbe, R Rizk, A J Kenyon, Nanotechnology, 23(45):455201, 2012, doi : 10.1088/0957-4484/23/45/455201
    URL https://hal.archives-ouvertes.fr/hal-01148236
  2. Fabrication and photoluminescence properties of Tb-doped nitrogen-rich silicon nitride films,Y-T. An, C. Labbe, M. Morales, P. Marie, F. Gourbilleau, Physica Status Solidi C, 9(10-11):2207, 2012, doi : 10.1002/pssc.201200253
    URL https://hal.archives-ouvertes.fr/hal-01149528
  3. Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions, S Cueff, C Labbe, O Jambois, Y Berencen, A J Kenyon, B Garrido, R Rizk, Optics Express, 20(20):22490, 2012, doi:10.1364/OE.20.022490
    URL https://hal.archives-ouvertes.fr/hal-01148169
  4. Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures, B. Dridi Rezgui, F. Gourbilleau, D. Maestre, O. Palais, A. Sibai, M. Lemiti, G. Bremond, Journal of Applied Physics, 112:024324, 2012, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00737845
  5. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate, S Salman, H Folliot, J Le Pouliquen, N Chevalier, T Rohel, C Paranthoen,N Bertru, C Labbe, Ae Letoublon, A Le Corre, Materials Science and Engineering : B, 2012, doi:10.1016/j.mseb.2012.03.053
    URL https://hal.archives-ouvertes.fr/hal-00698574
  6. Silicon nanoscale materials : from theoretical simulations to photonic applications, L Khriachtchev, S Ossicini, F Iacona, F Gourbilleau, International Journal of Photoenergy, 872576, 2012, doi : 10.1155/2012/872576
    URL https://hal.archives-ouvertes.fr/hal-00738420
  7. SiOx /SiNy multilayers for photovoltaic and photonic applications, R Pratibha Nalini, L Khomenkova, O Debieu, J Cardin, C Dufour, M Carrada, F Gourbilleau, Nanoscale Research Letters, 7(1):1 6, 2012, doi : 10.1186/1556-276X-7-124
    URL https://hal.archives-ouvertes.fr/hal-01139850
  8. Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide, C-H Liang, O Debieu, Y-T An, L Khomenkova, J Cardin, F Gourbilleau, Journal of Luminescence, 132:3118, 2012, doi:10.1016/j.jlumin.2012.01.046
    URL https://hal.archives-ouvertes.fr/hal-00736631
  9. Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-j silicates, E. Talbot, M. Roussel, C. Genevois, P. Pareige, L. Khomenkova, X. Portier, F. Gourbilleau, Journal of Applied Physics, 111:103519, 2012, doi:10.1063/1.4718440
    URL https://hal-cea.archives-ouvertes.fr/cea-00702702
  10. Track formation in two amorphous insulators, vitreous silica and diamond like carbon : Experimental observations and description by the inelastic thermal spike model, C. Rotaru, F. Pawlak, N. Khalfaoui, C. Dufour, J. Perriere, A. Laurent, J.P. Stoquert, H. Lebius,M. Toulemonde, Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, 272:9, 2012, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00735897
  11. Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal : Evidence for two thresholds of damage creation, M. Toulemonde, A. Benyagoub, C. Trautmann, N. Khalfaoui, M. Boccanfuso, C. Dufour, F. Gourbilleau, J.J. Grob, J.P. Stoquert, J.M. Costantini, F. Hass, E. Jacquet, K.O. Voss, A. Meftah, Physical Review B, 85:054112 1 16, 2012, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00675130.
  12. Ion-matter interaction : the threedimensional version of the thermal spike model Application to nanoparticle irradiation with swift heavy ions, C Dufour, V. Khomenkov, G. Rizza, M. Toulemonde, Journal of Physics D-Applied Physics, 45(6), 2012, doi : 10.1088/0022-3727/45/6/065302
    URL https://hal-polytechnique.archives-ouvertes.fr/hal-00739077
  13. Resistive switching in silicon suboxide films
    A. Mehonic, S. Cueff, M. Wojdak, S. Hudziak, O. Jambois, C. Labbe, B. Garrido, Ri. Rizk, and A. J. Kenyon, Journal of Applied Physics, 111(7):074507, 2012, doi : 10.1063/1.3701581
    URL https://hal.archives-ouvertes.fr/hal-01148232.

2011

  1. Enhancing The Optical And Electrical Properties of Si-based Nanostructured Materials, R Pratibha Nalini, P Marie, J Cardin, C Dufour, P. Dimitrakis, P. Normand, M Carrada, F Gourbilleau, Energy Procedia, 10:161 166, 2011, doi:10.1016/j.egypro.2011.10.170
    URL https://hal.archives-ouvertes.fr/hal-01139866
  2. Photon cutting for excitation of Er 3+ ions in SiO 2 sensitized by Si quantum dots, N. Ha, S Cueff, K Dohnalova, T. Trinh, C Labbe, R Rizk, N. Yassievich, T Gregorkiewicz, Physical Review B (Condensed Matter), 84:241308, 2011, doi : 10.1103/PhysRevB.84.241308
    URL https://hal.archives-ouvertes.fr/hal-01148295
  3. High rectifying behavior in Al/Sinanocrystal-embedded SiOxNy/p-Si heterojunctions. Semiconductor, E Jacques, L Pichon, O Debieu, F Gourbilleau, N Coulon, Science and Technology, 26(5):055005, 2011, doi : 10.1088/0268-1242/26/5/055005
    URL https://hal.archives-ouvertes.fr/hal-00618094. 5
  4. Texture e-ect of neodymium doped gallium oxide thin -lms on their optical properties, C. Lecerf, P. Marie, J. Cardin, F. Jomard, X. Portier, Optical Materials, 33(7):11311134, 2011, doi:10.1016/j.optmat.2010.10.026
    URL https://hal.archives-ouvertes.fr/hal-01147175
  5. Electromagnetic modeling of waveguide ampli-er based on Nd 3+ Si-rich SiO 2 layers by means of the ADE-FDTD method, C Dufour, J Cardin, O Debieu, A Fafin, F Gourbilleau, Nanoscale Research Letters, 6(1):1 5, April 2011. doi:10.1186/1556-276X-6-278
    URL https://hal.archives-ouvertes.fr/hal-01139823
  6. Electrical behaviour of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films, E Jacques, L Pichon, O Debieu, F Gourbilleau, Nanoscale Research Letters, 6:170, 2011, doi:10.1186/1556-276X-6-170
    URL https://hal.archives-ouvertes.fr/hal-00618107. 6
  7. Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography, M. Roussel, E. Talbot, F. Gourbilleau, P. Pareige, Nanoscale Research Letters, 6:164, February 2011, doi : 10.1186/1556-276X-6-164
    URL https://hal.archives-ouvertes.fr/hal-00737879
  8. Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films, O Debieu, J Cardin, X Portier, F Gourbilleau, Nanoscale Research Letters, 6(1):1 8, 2011. doi:10.1016/j.nimb.2003.11.037
    URL https://hal.archives-ouvertes.fr/hal-01139259
  9. New Si-based multilayers for solar cell applications, R Pratibha Nalini, C Dufour, J Cardin, F Gourbilleau, Nanoscale Research Letters, 6(156):1 5, 2011, doi:10.1186/1556-276X-6-156
    URL https://hal.archives-ouvertes.fr/hal-01139277
  10. Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide, S Cueff, C Labbe, B Dierre, J Cardin, L Khomenkova, F Filippo, T Sekiguchi, R Rizk, Journal of Nanophotonics, 5(1):051504 1 16, 2011, doi : 10.1117/1.3549701
    URL https://hal.archives-ouvertes.fr/hal-01139282
  11. Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films, S Cueff, C Labbe, J. Cardin, K Hijazi, J-L Doualan, O Jambois, B. Garrido, R Rizk, Physica Status Solidi C, 8(3):1027 1032, 2011, doi:10.1002/pssc.201000390
    URL https://hal.archives-ouvertes.fr/hal-01139274
  12. Hafnium Silicate dielectrics fabricated by RF magnetron sputtering, L. Khomenkova, X. Portier, P. Marie, F. Gourbilleau, Journal of Non-Crystalline Solids, 357:1860, 2011, doi:10.1016/j.jnoncrysol.2010.12.048
    URL https://hal.archives-ouvertes.fr/hal-00737872
  13. Atomic scale investigation of silicon nanowires and nanoclusters, M. Roussel, W.H. Chen, E. Talbot, R. Larde, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, P. Pareige, . Nanoscale Research Letters, 6:2711 6, 2011, doi:10.1186/1556-276X-6-271
    URL https://hal.archives-ouvertes.fr/hal-00597078
  14. Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films, S Cueff, C Labbe, O. Jambois, B. Garrido, X Portier, R Rizk, Nanoscale Research Letters, 6:395, 2011, doi:10.1186/1556-276X-6-395
    URL https://hal.archives-ouvertes.fr/hal-00601117
  15. Silicon nanoclusters embedded into oxide host for non-volatile memory applications, L. Khomenkova, X. Portier, B. Sahu, A. Slaoui, C. Bonafos, S. Schamm-Chardon, M. Carrada, F. Gourbilleau, ECS Transactions, 35:pp. 37 45, 2011, doi:10.1149/1.3647902
    URL https://hal.archives-ouvertes.fr/hal-00647540
  16. Hf-based high-k materials for Si nanocrystal floating gate memories, L Khomenkova, B.S. Sahu, A. Slaoui, F Gourbilleau, Nanoscale Research Letters, 6:172, 2011, doi ???
    URL https://hal.archives-ouvertes.fr/hal-00574358
  17. On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals, G Zatryb, A Podhorodecki, J Misiewicz, J. Cardin, F Gourbilleau. . Nanoscale Research Letters, 6(106):1 8, 2011, doi : 10.1186/1556-276X-6-106
    URL https://hal.archives-ouvertes.fr/hal-01139278
    # Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers, G R Mutta, J-M Routoure, B Guillet, L Mechin, J Grandal, S Martin-Horcajo, T Brazzini, F Calle, M A. Sanchez-Garcia, P Marie, P Rutenara, Applied Physics Letters, 98(25):2521041 3, 2011, doi:10.1063/1.3601855
    URL https://hal.archives-ouvertes.fr/hal-00976041

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