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Retrouver ici l’ensemble des publications du groupe de recherche NIMPH.

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  1. Sodalite cages of EMT zeolite confined neutral molecular-like silver clusters
    B. Dong, R. Retoux, V. De Waele, S. G. Chiodo, T. Mineva, J. Cardin, S. Mintova, Microporous and Mesoporous Materials, Elsevier, 2017,
  2. Fluorenyl Zinc Phosphonate Zn(H2O)PO3 -C13H9·H2O : Hybrid Columnar Structure with Strong C-H···π Interactions
    C. Bloyet, J.-M. Rueff, V. Caignaert, J.-F. Lohier, J. Cardin, P.-Al. Jaffrès, B. Raveau, Journal of Inorganic and General Chemistry / Zeitschrift für anorganische und allgemeine Chemie, 2017, doi:10.1002/zaac.201600362
  3. Down-shifting Si-based layer for Si solar applications
    L. Dumont, P. Benzo, J. Cardin, I.-S. Yu, C. Labbe, P. Marie, C. Dufour, G. Zatryb, A. Podhorodecki, F. Gourbilleau, Solar Energy Materials and Solar Cells, Elsevier, 2017, 169, pp.132-144.
  4. Thermo-stimulated evolution of crystalline structure and dopant distribution in Cu-doped Y- stabilized ZrO 2 nanopowders
    N. Korsunska, Y. Polishchuk, V. Kladko, X. Portier, L. Khomenkova.
    Materials Research Express, IOP Publishing Ltd, 2017, 4 (3), pp.035024.
  5. Impurity-Governed Modification of Optical and Structural Properties of ZrO 2 -Based Composites Doped with Cu and Y
    N. Korsunska, M. Baran, V. Vorona, V. Nosenko, L. Lavoryk, X.Portier, L.Khomenkova
    Nanoscale Research Letters, SpringerOpen, 2017, pp.157.
  6. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires
    Q. Liu, B. Liu, W. Yang, B. Yang, X. Zhang, C. Labbe, X. Portier, V. An, X. Jiang
    Nanoscale, Royal Society of Chemistry, 2017, pp.5212-5221.
  7. Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films
    C. Labbe, Y.-T. An, G.Zatryb, X. Portier, A. Podhorodecki, P. Marie, C. Frilay, J. Cardin, F.Gourbilleau
    Nanotechnology, Institute of Physics : Hybrid Open Access, 2017


  1. Optical, structural and electrical characterizations of stacked Hf-based and silicon nitride dielectrics
    L. Khomenkova, P. Normand, F. Gourbilleau, A. Slaoui, C. Bonafos, Thin Solid Films, 2016, doi:10.1016/j.tsf.2016.04.036
  2. Blue highly fluorescent boron difluoride complexes based on phthalazine-pyridine
    T. M. H. Vuong, J. Weimmerskirch-Aubatin, J.-F. Lohier, N. Bar, S. Boudin, C. Labbe, F. Gourbilleau, N. Hien, T Tung, T. Dang, D. Villemin, New Journal of Chemistry, 2016, doi:10.1039/C6NJ00726K
  3. Layered crystalline ZnIn2S4 nanosheets : CVD synthesis and photo-electrochemical properties
    B. Liu, T. Fang, W. Yang, J. Weimmerskirch-Aubatin, C. Labbe, Z. Li, X. Zhang, X. Jiang , Nanoscale, 2016, doi:10.1039/C6NR06969J
  4. SiNx:Tb3+–Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process
    L. Dumont, J. Cardin, P. Benzo, M. Carrada, A. L. Richard,D. C. Ingram, W. M. Jadwisienczak, F. Gourbilleau , Solar Energy Materials and Solar Cells, 2016, doi:10.1016/j.solmat.2015.09.031


  1. Copper–Fluorenephosphonate Cu­(PO3-C13H9)·H2O : A Layered Antiferromagnetic Hybrid
    N. Hugot, M. Roger, J.-M. Rueff, J. Cardin, O. Perez, V. Caignaert, B. Raveau, G. Rogez, P.-A. Jaffrès, European Journal of Inorganic Chemistry, WILEY-VCH Verlag, December 2015, doi : 10.1002/ejic.201501041
  2. Confined phase separation in SiOx nanometric thin layers, M. Roussel, E. Talbot, C. Pareige, R.P. Nalini, F. Gourbilleau, and P. Pareige, Applied Physics Letters, 103:203109 2015, doi : 10.1063/1.4830375
  3. Three-Dimensional Devices Transport Simulation Lifetime and Relaxation Semiconductor, N. Fadila, S. Mansouri, M. Amrani, P. Marie, and A. Massoum. International Journal of Electrical and Computer Engineering (IJECE), 5(2):243, 2015, doi ???
  4. Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method : comparison of achievable gain with Er3+ or Nd3+ ions dopants, J. Cardin, A. Fafin, C. Dufour, and F. Gourbilleau, PROC of SPIE, Vol. 9357 Physics and Simulation of Optoelectronic Devices XXIII, Photonics West 2015, San Francisco, United States, February 2015, doi : 10.1117/12.2077611
  5. Two components for one resistivity in LaVO3/SrTiO3 heterostructure, H. Rotella, O. Copie, A. Pautrat, P. Boullay, A. David, D. Pelloquin, C. Labbe, C. Frilay, W. Prellier, Journal of Physics : Condensed Matter, IOP Publishing, 2015, 27 (9), pp.095603 1-8. <10.1088/0953-8984, doi : 10.1088/0953-8984
  6. Ag doped silicon nitride nanocomposites for embedded plasmonics, M. Bayle, C. Bonafos, P. Benzo, G. Benassayag, B. Pecassou, L Khomenkova, F. Gourbilleau, R. Carles, Applied Physics Letters, American Institute of Physics, 2015, 107, pp.101907.
  7. Electron transport through a metallic nanoparticle assembly embedded in SiO2 and SiNx by low energy ion implantation, M. Bayle, J. Grisolia, G. Ben Assayag, B. Pecassou, C. Bonafos, P. Benzo, F. Gourbilleau, R. Carles, physica status solidi (c), Wiley, 2015, <10.1002/pssc.201510147>
  8. Ab Initio Calculations and Experimental Properties of CuAl x Ga1−x Te2 for Photovoltaic Solar Cells, M. Benabdeslem, H. Sehli, S. Rahal, N. Benslim, L. Bechiri, A. Djekoun, T. Touam, M. Boujnah, A. El Kenz, A. Benyoussef, X. Portier, Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2015,
  9. Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography : Influence of the analysis parameters, N. Amirifar, R. Lardé, E. Talbot, P. Pareige, L. Rigutti, L. Mancini, J. Houard, C. Castro, V.Sallet, E. Zehani, S. Hassani, C. Sartel, A. Ziani,Xavier Portier, Journal of Applied Physics, American Institute of Physics, 2015, 118 (21)
  10. Characterization of nanostructured ZnO grown by linear sweep voltammetry, L. Atourki,I. El Hassane , H. Kirou, K. Bouabid, A. Elfanaoui, L. Laanab, X. Portier, A. Ihlal, Solar Energy Materials and Solar Cells, Elsevier, 2015,
  11. On the morphology of MoS2 slabs on MoS2/Al2O3 catalysts : the influence of Mo loading, J. Chen, L. Oliviero, X. Portier, F. Maugé, RSC Advances, Royal Society of Chemistry, 2015
  12. La1−xLnxH(O3PCH3)2 (Ln = Tb, Eu ; 0 < x ≤ 1) : an organic–inorganic hybrid with lanthanide chains and tunable luminescence properties, B. Mutelet, S. Boudin, O. Pérez, J. M. Rueff, C.Labbe, P.-A. Jaffres, Dalton Transactions, Royal Society of Chemistry, 2015, 44 (3),


  1. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor, K. Hamdani, M. Chaouche, M. Benabdeslem, L. Bechiri, N. Benslim, A. Amara, X. Portier, M. Bououdina, A. Otmani, P. Marie, Optical Materials, 37:338, November 2014, doi:10.1016/j.optmat.2014.06.022
  2. Concentration determination and activation of rare earth dopants in zinc oxide thin films, A. Ziani, A. Tempez, C. Frilay, C. Davesnne, C. Labbe, P. Marie, S. Legendre, X. Portier. Physica Status Solidi C, 11(9-10):1, September 2014, doi:10.1002/pssc.201300636
  3. Theoretical investigation of the more suitable rare earth to achieve high gain in waveguide based on silica containing silicon nanograins doped with either Nd3+ or Er3+ ions, A. Fafin, J. Cardin, C. Dufour, and F. Gourbilleau, Optics Express, 22(10):12296 12306, May 2014, doi : 10.1364/OE.22.012296
  4. Photochemical preparation of silver nanoparticles supported on zeolite crystals, M. Zaarour, M. El Roz, B. Dong, R. Retoux, R. Aad, J. Cardin, C. Dufour, F. Gourbilleau, J.-P. Gilson, S. Mintova, Langmuir, 30(21):62506256, May 2014, doi:10.1021/la5006743
  5. Spectroscopic and structural investigation of undoped and Er3+ doped hafnium silicate layers, L. Khomenkova, Y.-T. An, D. Khomenkov, X. Portier, C. Labbé, F. Gourbilleau, Physica B+C, 453:100, April 2014, doi:10.1016/j.physb.2014.03.087
  6. Annealing effects on the photoluminescence of terbium doped zinc
    oxide films, A. Ziani, C. Davesnne, C. Labbé, J. Cardin, P. Marie, X. Portier, C. Frilay, S. Boudin, Thin Solid Films, 553:52 57, February 2014, doi:10.1016/j.tsf.2013.11.123
  7. Analysis of carrier injection in Si nanoparticle-SiOx film based MOS devices, E. Jacques, L. Pichon, C. Labbé, L. Khomenkova, F. Gourbilleau, physica status solidi (c), 11(2):206, February 2014, doi : 10.1002/pssc.201300379,
  8. Structural characterisation of BaTiO3 thin films deposited on SrRuO3/YSZ buffered silicon substrates and silicon microcantilevers, H. Colder, B. Domenges, C. Jorel, P. Marie, M. Boisserie, S. Guillon, L. Nicu, A. Galdi, L. Mechin, Journal of Applied Physics,115(5):053506, 2014,
  9. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54µm, J. M. Ramirez, S. Cueff, Y. Berencen, C. Labbé, B. Garrido, Journal of Applied Physics, 116:083103 1 4, 2014, doi : 10.1063/1.4893706
  10. On the relevance of large scale pulsed-laser deposition : Evidence of structural heterogeneities in ZnO thin films, J Perriere, C Hebert, N. Jedrecy, W Seiler, O Zanellato, X Portier, R Perez-Casero, E Millon, M Nistor, Journal of applied physics, 116:123502, 2014, doi:10.1063/1.4896379
  11. Energy deposition by heavy ions : Additivity of kinetic and potential energy contributions in hillock formation on CaF2, Y. Y. Wang, C. Grygiel, C. Dufour, J. R. Sun, Z. G. Wang, Y. T. Zhao, G. Q. Xiao, R. Cheng,X. M. Zhou, J. R. Ren, S. D. Liu, Y. Lei, Y. B. Sun, R. Ritter, E. Gruber, A. Cassimi, I. Monnet, S. Bouffard, F. Aumayr, M. Toulemonde, Scientific Reports, 4:5742, 2014, doi : 10.1038/srep05742,
  12. Energy transfer mechanism between terbium and europium ions in zinc oxide and zinc silicates thin films, C. Davesnne, A. Ziani, C. Labbé, P. Marie, C. Frilay, X. Portier, Thin Solid Films, 553:33, 2014, doi : 10.1016/j.tdf.2013.11.122
  13. Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped, R. Khelif, H. Mazari, S. Mansouri, Z. Benamara, M. Mostefaoui, K. Ameur, N. Benseddik, P. Marie, P. Ruterana, I. Monnet, J.-M. Bluet, C. Bru-Chevallier, Sensors and Transducers, 27:217, 2014 doi ???
  14. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor, K. Hamdani, M. Chaouche, M. Benabdeslem, L. Bechiri, N. Benslim, A. Amara, X. Portier, M. Bououdina, A. Otmani, P. Marie, Optical Materials, Elsevier, 2014, 37, pp.338, doi:10.1016/j.optmat.2014.06.022
  15. Formation and Study of the Nanostructured CuAl0.5Ga0.5Te2 Synthesized by Mechanical Alloying Processing, H. Sehli, M. Benabdeslem, N. Benslim, L. Bechiri, H. Ayed, A. Djekoun, M. Boujnah, X. Portier, S. Ammar, H. Lecoq, S. Novack, P. Decorse, JOM Journal of the Minerals, Metals and Materials Society, Springer Verlag (Germany), 2014, 66 (6), pp.985-991, doi:10.1007/s11837-014-0957-4
  16. Zn incorporation in CuInSe2 : Particle size and strain effects on microstructural and electrical properties, M Benabdeslem, A Bouasla, N Benslim, L Bechiri, S Mehdaoui, O Aissaoui, A Djekoun, M Fromm, X Portier, Bulletin of Materials Science, Indian Academy of Sciences, 2014, 37 (3), pp.469-472, doi:10.1007/s12034-014-0687-9


  1. Electroluminescence effciencies of erbium in silicon-based hosts, S. Cueff, J. M. Ramirez, J. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and C. Labbe, Applied Physics Letters, 103:191109, November 2013. doi:10.1063/1.4829142
  2. Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering, L. Khomenkova, M. Baran, O. Kolomys, V. Strelchuk, A. V. Kuchuk, V.P. Kladko, J. Jedrzejewski, I. Balberg, Y. Goldstein, P. Marie, F. Gourbilleau, N. Korsunska, Advanced Materials Research, 854:117, November 2013, doi : 10.4028/
  3. Modeling of the electromagnetic field and level populations in a waveguide amplifier : a multi-scale time problem, A. Fafin, J. Cardin, C. Dufour, F. Gourbilleau, Optics Express, 21(20):24171, October 2013, doi:10.1364/OE.21.024171
  4. Highly Effcient Infrared Quantum Cutting in Tb3+Yb3+ Codoped Silicon Oxynitride for Solar Cell Applications, Y.-T. An, C. Labbé, J. Cardin, M. Morales, F. Gourbilleau. . Advanced Optical Materials, 1(11):85586, September 2013, doi:10.1002/adom.201300186
  5. Phase transformation in SiOx/SiO2 multilayers for optielectronics and microelectronics applications, M. Roussel, E. Talbot, R.P. Nalini, F. Gourbilleau, P. Pareige, Ultramicroscopy, 132:290, September 2013, doi:10.1016/j.ultramic.2012.10.013
  6. Evidence of two sensitization processes of Nd3+ ions in Nd-doped SiOx films, C.-H. Liang, J. Cardin, C. Labbé, and F. Gourbilleau, Journal of Applied Physics, 114:033103, July 2013, doi : 10.1063/1.4813610
  7. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon
    rich silicon nitride waveguides, P. Pirasteh, J. Charrier, Y. Dumeige, J.-L. Doualan, P. Camy, O. Debieu, C.-H. Liang, L. Khomenkova, J. Lemaitre, Y. G. Boucher, F. Gourbilleau, Journal of Applied Physics, 114(1):014906, July 2013, doi:10.1063/1.4812470
  8. Undoped and Nd3+ doped Si-based single layers and superlattices for photonic applications, L. Khomenkova, C. Labbé, X. Portier, M. Carrada, F. Gourbilleau, Physica Status Solidi A, pages 1 12, June 2013, doi : 10.1002/pssa.201200942
  9. Si-rich Al2O3 films grown by RF magnetron sputtering : structural and
    photoluminescence properties versus annealing treatment, N. Korsunska, L. Khomenkova, O. Kolomys, V.Strelchuk, A. Kuchuk, V. Kladko, T. Stara, O. Oberemok, B. Romanyuk, P. Marie, J. Jedrzejewski, I. Balberg, Nanoscale Research Letters, 8:273, June 2013, doi ???
  10. Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters, M. Wojdak, H. Jayatilleka, M. Shah, A. J. Kenyon, F. Gourbilleau, R.Rizk, Journal of Luminescence, 136:407, April 2013, doi ???
  11. Influence of the supersaturation on Si diffusion and growth of Si nanoparticles in silicon-rich silica, M. Roussel, E. Talbot, P. Pareige, F. Gourbilleau, Journal of Applied Physics, 113:063519, February 2013, doi ???
  12. Structural and optical characterization of pure Si-rich nitride thin films, O. Debieu, R.P. Nalini, J. Cardin, X. Portier, J. Perriere, F. Gourbilleau, Nanoscale Research Letters, 8:31, February 2013, doi:10.1186/1556-276X-8-31
  13. Microstructure and optical properties of Pr3+-doped hafnium silicate films, Y.-T. An, C. Labbé, L. Khomenkova, M. Morales, X. Portier, F. Gourbilleau, Nanoscale Research Letters, 8:43, February 2013, doi : 10.1186/1556-276X-8-43
  14. Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica, E. Talbot, R. Lardé, P. Pareige, L. Khomenkova, K. Hijazi, F. Gourbilleau, Nanoscale Research Letters, 8:39, February 2013, doi ???
  15. Structural and optical characterization of pure Si-rich nitride thin -films, O. Debieu, R. P. Nalini, J. Cardin, X. Portier, J. Perriere, F. Gourbilleau, Nanoscale Research Letters, 8(1):1 13, 2013, doi : 10.1063/1.1485302
  16. Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide, G. Zatryb, A. Podhorodecki, J. Misiewicz, J. Cardin, F. Gourbilleau, Nanoscale Research Letters, 8(1):1 7,2013, doi : 10.1016/j.solidstatesciences.2009.05.004
  17. Characterization of oxygen deficient gallium oxide films grown by PLD, A. Petitmangin, B. Gallas, C. Hebert, J Perriere, L Binet, P Barboux, X Portier, Applied Surface Science, 2013, 278, pp.153-157, doi:10.1016/j.apsusc.2012.10.136
  18. Quantum Conductance in Silicon Oxide Resistive Memory Devices
    A. Mehonic, A Vrajitoarea, S Cueff, S Hudziak, H Howe, C Labbe, R Rizk, M Pepper, and A. J. Kenyon, Scientific Reports, 3:2703, 2013, doi : 10.1038/srep02708


  1. Electrically tailored resistance switching in silicon oxideAdnan Mehonic, S Cueff, M Wojdak, S Hudziak, C Labbe, R Rizk, A J Kenyon, Nanotechnology, 23(45):455201, 2012, doi : 10.1088/0957-4484/23/45/455201
  2. Fabrication and photoluminescence properties of Tb-doped nitrogen-rich silicon nitride films,Y-T. An, C. Labbe, M. Morales, P. Marie, F. Gourbilleau, Physica Status Solidi C, 9(10-11):2207, 2012, doi : 10.1002/pssc.201200253
  3. Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions, S Cueff, C Labbe, O Jambois, Y Berencen, A J Kenyon, B Garrido, R Rizk, Optics Express, 20(20):22490, 2012, doi:10.1364/OE.20.022490
  4. Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures, B. Dridi Rezgui, F. Gourbilleau, D. Maestre, O. Palais, A. Sibai, M. Lemiti, G. Bremond, Journal of Applied Physics, 112:024324, 2012, doi ???
  5. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate, S Salman, H Folliot, J Le Pouliquen, N Chevalier, T Rohel, C Paranthoen,N Bertru, C Labbe, Ae Letoublon, A Le Corre, Materials Science and Engineering : B, 2012, doi:10.1016/j.mseb.2012.03.053
  6. Silicon nanoscale materials : from theoretical simulations to photonic applications, L Khriachtchev, S Ossicini, F Iacona, F Gourbilleau, International Journal of Photoenergy, 872576, 2012, doi : 10.1155/2012/872576
  7. SiOx /SiNy multilayers for photovoltaic and photonic applications, R Pratibha Nalini, L Khomenkova, O Debieu, J Cardin, C Dufour, M Carrada, F Gourbilleau, Nanoscale Research Letters, 7(1):1 6, 2012, doi : 10.1186/1556-276X-7-124
  8. Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide, C-H Liang, O Debieu, Y-T An, L Khomenkova, J Cardin, F Gourbilleau, Journal of Luminescence, 132:3118, 2012, doi:10.1016/j.jlumin.2012.01.046
  9. Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-j silicates, E. Talbot, M. Roussel, C. Genevois, P. Pareige, L. Khomenkova, X. Portier, F. Gourbilleau, Journal of Applied Physics, 111:103519, 2012, doi:10.1063/1.4718440
  10. Track formation in two amorphous insulators, vitreous silica and diamond like carbon : Experimental observations and description by the inelastic thermal spike model, C. Rotaru, F. Pawlak, N. Khalfaoui, C. Dufour, J. Perriere, A. Laurent, J.P. Stoquert, H. Lebius,M. Toulemonde, Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, 272:9, 2012, doi ???
  11. Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal : Evidence for two thresholds of damage creation, M. Toulemonde, A. Benyagoub, C. Trautmann, N. Khalfaoui, M. Boccanfuso, C. Dufour, F. Gourbilleau, J.J. Grob, J.P. Stoquert, J.M. Costantini, F. Hass, E. Jacquet, K.O. Voss, A. Meftah, Physical Review B, 85:054112 1 16, 2012, doi ???
  12. Ion-matter interaction : the threedimensional version of the thermal spike model Application to nanoparticle irradiation with swift heavy ions, C Dufour, V. Khomenkov, G. Rizza, M. Toulemonde, Journal of Physics D-Applied Physics, 45(6), 2012, doi : 10.1088/0022-3727/45/6/065302
  13. Resistive switching in silicon suboxide films
    A. Mehonic, S. Cueff, M. Wojdak, S. Hudziak, O. Jambois, C. Labbe, B. Garrido, Ri. Rizk, and A. J. Kenyon, Journal of Applied Physics, 111(7):074507, 2012, doi : 10.1063/1.3701581

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