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Accueil du site > Productions Scientifiques > Publications > The structure of InAlN/GaN heterostructures for high electron mobility transistors
The structure of InAlN/GaN heterostructures for high electron mobility transistors
par - 12 mai 2010
Vilalta-Clemente A., Poisson M.A., Behmenburg H., Giesen C., Heuken M., Ruterana P.
Physica Status Solidi A 207 n°5 (2010) 1105-1108
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