- 1. Sub-gigahertz laser resonant ultrasound spectroscopy for the evaluation of elastic properties of micrometric fibers , D. Mounier, Ch. Poilâne, H. Khelfa, P. Picart, Ultrasonics 54, 259-267 (2014)
doi:10.1016/j.ultras.2013.06.014
- 2. Half metallic properties of the quaternary CuFe2GaSe4 chalcogenide compound , S. Medina, B. Bouhafs, P. Ruterana, Computational Materials Science 85, 159 (2014) doi:10.1016/j.commatsci.2013.12.039
- 3. Porous GaN and High-kappa MgO-GaN MOS Diode Layers Grown in a Single Step on Silicon , O.V.Bilousov, J.J. Carvajal, A. Vilalta Clemente, P. Ruterana, F. Díaz, M. Aguilo ?, and C. O’Dwyer, Chem. Mater. 26, 1243 (2014) doi:10.1021/cm4037023
- 4. Polymer reinforced by flax fibres as a viscoelastoplastic material , C. Poilâne, Z.E. Cherif, F. Richard, A. Vivet, B. Ben Doudou, J. Chen, Composite Structures 112, 100 (2014) doi:10.1016/j.compstruct.2014.01.043
- 5. Hybrid carbon nanotube-silica / polyvinyl alcohol nanocomposites films : preparation and characterisation , B. Ben Doudou, A. Vivet, J. Chen, A. Laachachi, T. Falher and C. Poilâne, J. Polym. Res 21, 420 (2014) doi : 10.1007/s10965-014-0420-9
- 6. Surface and crystal structure of thin nitridated layers on c-plane sapphire and subsequently grown polar InN, D. Skuridina, D.V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl and P. Vogt, Applied Surface Science 307, 461 (2014) doi:10.1016/j.apsusc.2014.04.057
- 7. An efficient photoanode consisting of TiO2 nanoparticle-filled TiO2 nanotube arrays for dye-sensitized solar cell, J. Zhang, Q.Li, S.Li, Y. Wang, C.Ye, P.Ruterana, and H.Wang, Journal of Power Sources 268, 941 (2014) doi:10.1016/j.jpowsour.2014.06.139
- 8. Direct imaging of rare earth ion clusters in Yb:CaF2, B. Lacroix, C. Genevois, J. L. Doualan, G. Brasse, A. Braud, P. Ruterana, P. Camy, E. Talbot, R. Moncorgé and J. Margerie, Phys. Rev. B 90, 125124 (2014) doi:10.1103/PhysRevB.90.125124
- 9. Influence of fabrication steps on optical and electrical properties of InN thin films, G. R. Mutta, T. Brazzini, L. Méchin, B. Guillet, J.-M. Routoure, J.-L. Doualan, J. Grandal, M. del Carmen Sabido Siller, F. Calle and P. Ruterana, Semicond. Sci. Technol. 29, 095010 (2014) doi:10.1088/0268-1242/29/9/095010
- 10. Positron energy levels in zinc chalcogenides ZnS, ZnSe and ZnTe, F. Benosman, N. Benosman, S. Mecabih, P. Ruterana, B. Abbar and B. Bouhafs, Comput. Mater. Sci 93, 22 (2014) doi:10.1016/j.commatsci.2014.06.018
- 11. Atomistic Modeling and HAADF Investigations of Misfit and Threading Dislocations in GaSb/GaAs Hetero-structures for Applications in High Electron Mobility Transistors, International Conference of Computational Methods in Sciences and Engineering 2014 (ICCMSE 2014), 4-7 April, 2014 in Athens, Greece AIP Conference Proceedings 1618, 51 (2014)
- 12. Evidence of guided acoustic waves propagating along a micrometric fiber, H. Khelfa, D. Mounier, C. Poilâne and P. Picart, Appl. Phys. Lett. 105, 161906 (2014) doi:10.1063/1.4899195
- 13. Electronic and magnetic properties of Fe2SiC, N. Metadjer , B. Bouhafs and P. Ruterana, Eur. Phys J. B87, 240 (2014) doi:10.1140/epjb/e2014-50068-6
- 14. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, and C. Trager-Cowan, AIP Advances J. 4, 127101 (2014) « doi:10.1063/1.4903227 »
- 15. Electronic structure and metallization effects at threading dislocation cores in GaN, I. Belabbas, J. Chen and G. Nouet, Comput. Mat. Sci. 90 , 71-81 (2014) « doi:10.1016/j.commatsci.2014.04.021 »
- 16. Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy, L. Desplanque, M. Fahed, X. Han, V.K. Chinni, D. Troadec, M.P. Chauvat, P. Ruterana & X. Wallart, Nanotechnology 25 , 6 (2014) « doi:10.1088/0957-4484/25/46/465302 »
- 17. High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy : Growth conditions, strain relaxation, and In incorporation kinetics, S. Valdueza-Felip, E. Bellet-Amalric, A. Nunez-Cascajero, Y. Wang, M.P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves & E. Monroy, J. Applied Physics 116 , 9 (2014) « doi:10.1063/1.4903944 »
- 18. Rare earth doped LiYF4 single crystalline films grown by liquid phase epitaxy for the fabrication of planar waveguide lasers,Florent Starecki, Western Bolaños, Gurvan Brasse, Abdelmjid Benayad, Magali Morales, Jean-Louis Doualan, Alain Braud, Richard Moncorgé and Patrice Camy, Journal of Crystal Growth 401 , 537 (2014) « doi:10.1016/j.jcrysgro.2014.01.039 »
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