1 . The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism, Y. Wang, P. Ruterana,S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, Appl. Phys. Lett. 102, 052102 (2013)
2. Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells, H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.-P. Chauvat, P. Ruterana, G. Nataf, Ph. De Mierry, E. Monroy, and F. H. Julien, J. Appl. Phys. 113, 143109 (2013)
3. First principles calculations of the elastic, and electronic properties of YFe2, NiFe2 and YNiFe4 intermetallic compounds, N. Moulay , H. Rached, M. Rabah, S. Benalia, D. Rached , Ali H. Reshak , N. Benkhettou, P. Ruterana, Computational Materials Science 73, 56 (2013)
4. An efficient stochastic and double-scale model to evaluate the effective elastic properties of 2D overlapping random fibre composites , W. Leclerc, P. Karamian-Surville, A. Vivet, Computational Materials Science 69, 481 (2013)
5. Influence of hygrothermal ageing on the damage mechanisms of flax-fibre reinforced epoxy composite, D. Scida, M. Assarar, C. Poilâne, and R. Ayad, Composites Part B-Engineering 48, 51 (2013)
6. Microstructure and optical properties of Pr3+-doped hafnium silicate films, Y.-T. An, Ch. Labbé, L. Khomenkova, M. Morales, Xavier Portier, Fabrice Gourbilleau, Nanoscale Research Letters, 8, 43 ( 2013)
7. The strain models of misfit dislocations at cubic semiconductors hetero-interfaces, Y. Wang, and P.Ruterana, Appl. Phys. Lett. 103, 102105 (2013)8. Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes , R. Khelifi, R. Mazari, S. Mansouri, K. Ameur, Z . Benamara, M. Mostefaoui, N. Benseddik, N. Benyahya, P. Ruterana, I. Monnet, J.M. Bluet, and C . Bru-Chevallier, J. Optoelect. Adv. Mater. 15, 471 (2013)
9. The 60° basal dislocation in wurtzite GaN : energetics, electronic and core structures , I. Belabbas, J. Chen, Ph. Komninou et G. Nouet, Comput. Mater. Sci. 79, 118 (2013)
10. Influence of textile treatment on mechanical and sorption properties of flax/epoxy composites , Z. E. Cherif, Ch. Poilâne, T. Falher, A. Vivet, N. Ouail, B. Ben Doudou, J. Chen, Polym Composite 34, 1761 (2013)
11. Antimony mediated control of misfit strain at the high lattice mismatched GaSb/GaAs interface , Y. Wang, P. Ruterana, J. Chen, S. Kret, S. El Kazzi, C. Genevois, L. Desplanque and X. Wallart, ACS Appl. Mater. Interfaces 5, 9760 (2013)
12. Polarity determination of polar and semipolar (11-22) InN and GaN layers by valence band photoemission spectroscopy , D. Skuridina, D. V. Dinh, B. Lacroix, P. Ruterana, M. Hoffmann, Z. Sitar, M. Pristovsek, M. Kneissl and P. Vogt, J. Appl. Phys. 114, 173503 (2013)
13. Structure and magnetism of epitaxial PrVO3 films , O. Copie, H. Rotella, P. Boullay, M. Morales, A. Pautrat, P-E Janolin, I. C. Infante, D. Pravathana, U. Lüders and W. Prellier, J. Phys. : Condens. Matter 25, 492201 (2013)14. Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors , Pierre Ruterana, Marie-Pierre Chauvat, and Katharina Lorenz, Jpn. J. Appl. Phys. 52, 11NH02 (2013)
15. Atomic Core Structures Associated to the Threading Dislocation with h1-100i Burgers Vector and [0001] Line Direction in GaN , Antoine Béré , Pierre Ruterana, Marie-Pierre Chauvat, and Jean Koulidiati, Jpn. J. Appl. Phys. 52, 11NG06 (2013)
16. Highly Efficient Infrared Quantum Cutting in Tb3+ ?Yb3+ Codoped Silicon Oxynitride for Solar Cell Applications , Y.T. An , C. Labbé, J. C. Cardin, Magali Morales, and F. Gourbilleau, Advanced Optical Materials 11, 855 (2013) DOI : 10.1002/adom.201300186
17. Assessment of Digital Image Correlation Measurement Accuracy in the Ultimate Error Regime : Main Results of a Collaborative Benchmark , F. Amiot, M. Bornert, P. Doumalin, J.C. Dupre, M. Fazzini, J.J. Orteu, C. Poilane, L. Robert, R. Rotinat, E. Toussaint, B. Wattrisse, J.S. Wienin, STRAIN 49, 483 (2013)
