Accueil > RECHERCHE > Matériaux et optique > Equipe PM2E > Contrats & Projets > OSIRIS-EcselJu (Europe)

Descriptif OSIRIS-EcselJu

par CHAUVAT Marie-pierre - publié le , mis à jour le

OSIRIS-EcselJu : Optimal SIC substRates for Integrated Microwave and Power CircuitS

Research and Innovation Action (RIA), H2020 GA N° 662322

Consortium : III-V Lab (leader, GaN technology), Ascatron (SiC technology for power electronics), CNRS-CIMAP (material analysis), Intraspec Technologies (wafer and device characterisation), Isosilicon (extraction of Si isotopes), University of Linkoping (expertise on developing isotopic SiC), NORSTEL (SiC substrate supplier), STUBA-FEI (Micro-/Nano-Electronics, Photonics), UMS(III-V component manufacturer)

OSIRIS aims at improving substantially the cost effectiveness and performances of gallium nitride (GaN) based millimeter wave components. OSIRIS expects to achieve a thermal conductivity increased by 30%, which signals a major breakthrough for devices that must handle high power. For next-generation transistors, these new wafers will bring significant cost savings. This consortium of 11 partners being companies and academic laboratories has started in 2015 with the ambition to bring these technologies from TRL 3 to TRL 5, the European Effort is coordinated by III-V Lab and Pierre Ruterana, CIMAP, is in charge of the dissemination policy as well as the coordination of the national effort in relation with the “Direction Générales des Entreprises ” (DGE)