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HEMT (High Electron Mobility Transistors)

par CHAUVAT Marie-pierre - publié le , mis à jour le

HEMT based on InAlGaN/GaN and ZnO/GaN heterostructures

  • HEMT based on InAlGaN/GaN

From a multiscale modeling approach to complete our TEM investigations, we have showed through phase diagram analysis that the InAlN alloy is conventionally grown inside the instability zone. This allowed us to explain the typical layer morphology which exhibits a systematic roughness on GaN although the lattice mismatch is negligible when the indium composition is kept at around 18% for the epitaxy on GaN. Through a detailed analysis of the surface stability and kinetics, we found that surface defects are very stable, especially those including the nitrogen vacancy. Such defects are at the basis of the intrinsic 3D grown which may start at the initial stages of the heteroepitaxy.

  • ZnO/GaN heterostructures

Our experimental and theoretical investigations have shown that the polarity can be changed within one atomic layer leading to a controlled buildup of a two dimensional hole or electron gas which could be used for novel high electron/hole gas mobility transistors.

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